Dependence of crystal orientation of hafnium nitride thin film on substrate position in rf magnetron sputter deposition

Abstract

Hafnium nitride (HfN) thin films were deposited by rf magnetron sputtering using HfN target at different positions on the substrate holder. The relationship between the crystal orientation and the substrate position during the deposition was investigated by measuring the rocking curves of X-ray diffraction. The films deposited with RF power of 80 W, substrate temperature of 500°C, and argon pressure of 1.2 Pa, showed rocking curves depending on the substrate position, suggesting different crystal orientation.