HEMTs for millimeter- and terahertz-wave wireless communications, and its applications in Beyond 5G

Abstract

InGaAs- and GaN-based high electron mobility transistors (HEMTs) have been expected as key devices for ultra-high-speed wireless communications and expansion of radio spectrum sources in millimeter- and submillimeter-wave frequency band (30 GHz—3 THz) because these devices can operate at a frequency over 100 GHz. We have demonstrated device performances of their HEMTs with nanoscale gates (L_g < 100 nm) for millimeter- and terahertz-wave wireless communications and Beyond 5G applications.