抄録
The synchrotron radiation source was used for X-ray stress measurement of sintered silicon nitride and alumina. X-ray diffraction was recorded with a position sensitive detector. The sin2ψ method was adopted to determine the X-ray elastic constants of the (323) plane for silicon nitride, and of the (1.0.10), (220), (146), and (4.0.10) planes for alumina. The X-ray values of Young's modulus E and Poisson's ratio ν for the (323) plane of silicon nitride were 305GPa and 0.285, which agreed with the values obtained by the ordinary parallel-beam method utilizing Cu-K α radiation. For alumina, the value of E/(1+ν) measured by X-rays decreased in the order of (146), (1.0.10), (220), and (4.0.10). This order agreed with that predicted from the elastic constants of a single crystal on the basis of the Reuss model. The measured value of E/(1+ν) decreased with decreasing purity and increasing porosity.
