多接合層を有する半導体チップ接合構造のひずみ支配パラメータ
1993 年 59 巻 566 号 p. 2303-2309
詳細
1993 年 59 巻 566 号 p. 2303-2309
A new parameter, Cij, is proposed for taking into account the effects of the interaction of multi-bonding layers on the strains of bonding layers with nonelastic behavior in semiconductor chip bonding structures under temperature changes. The previously proposed strain solution of a single bonding layer is extended to the solution of multi-bonding layers through use of this new parameter. This solution shows good agreement with FEM results. It is found from the consideration of sample structures that Cij is a useful parameter for optimizing multi-bonding layer structures.
