In this study, an eptitaxial fabrication technique of a newly designed biocompatible piezoelectric material MgSiO3 is developed, which has a tetragonal perovskite lattice structure. This crystal structure was designed by using HSAB rule, the geometrical compatibility assessment, and the first principles DFT analyses. Here, the helicon wave plasma sputter (HWPS) deposition method is adapted to deposit an epitaxial thin film of MgSiO3 tetragonal perovskite on a biocompatible substrate Ir/Ti/Si. Ir/Ti/Si substrate has better compatibility with MgSiO3 (111) plane, because of its close lattice constant. An optimum condition of HWPS for depositing MgSiO3 tetragonal perovskite was sought by using the design of experiments method. As the result, the target composition ratio and the surface temperature were found as the dominant fabrication factor, and precise optimum condition search was carried out. Finally, MgSiO3 thin film was successfully fabricated and the piezoelectric and ferroelectric properties were measured. It shows a piezoelectric constant d31 is -1.74×10-12 m/V.
