分子動力学法によるアルミスパッタ膜の流動形状解析

抄録

It is important that Al films fill contact holes on substrates in order to produce high-density devices. In this paper, free surface profiles of Al films deposited in a high-temperature reflow process on substrates with and without trenches are calculated using molecular dynamics simulation. We use an atomic-scale model to analyze microscale nucleation on the substrates. We calculate the effects on nucleation of the initial configuration and temperature of the Al film and the bond energy between Al and the substrates. We find that nucleation occurs significantly when the Al film is initially thicker at the edge of the trench than at the bottom of the trench.