Cusp 磁場印可 CZ 法による単結晶成長の GSMAC 有限要素法解析(流体工学, 流体機械)

抄録

This paper presents numerical analysis of the growth process of silicon (Si) single crystal. The technique applied is MCZ method. In MCZ method, two magnetic fields positioned facing each other is called cusp magnetic field. The cusp magnetic fields used for the analysis are outside magnetic field, surface magnetic field and inside magnetic field. In addition, the analysis was made using direct magnetic field. The results from our analysis and Watanabe's experiment were compared. And the examination and comparison of the calculation results were performed to the velocity field, temperature field and electromagnetic field. Each case was further examined centered on the degree of stirring, shaft symmetry and flow stability. Our examination drew us to conclude that the cusp magnetic field that satisfies these conditions in the inside magnetic field. The reason is that the flow of silicon was well controlled by the specific characteristics of the cusp magnetic field