半導体ランプ熱処理装置におけるウエハ均一加熱制御方法の検討

抄録

To unify heat flux on a wafer during rapid thermal processing with lamp heaters, we developed a rapid computation technique to find the optimum conditions for controlling lamp heating rate. Box's method was used to optimize heating rate by repeatedly calculating distributions of heat flux on the wafer by using 3D radiative heat transfer analysis program. Calculation results show that the minimum distribution of heat flux on the wafer is 1.5% at a heat-up condition of 100°C/s and 4-zones control of 16 rod-type lamps. The minimum heat flux on the wafer is 210 W/m² (so the temperature difference in the wafer is 0.5°C) at a steady state at 1000°C. This minimum heat flux is 1/15 times of that produced by non-controlled heating with the same lamps.