Temperature Characteristic of pn Junction Diode Using Composite Film of Conductive Polymer Nanofibers

Abstract

We fabricated complementary devices with a pn junction between p-type nanofiber/PMMA composite film and n-type nanofiber/PMMA composite film and evaluated the temperature dependence. This full-organic pn junction, fabricated in this study showed rectification, but, as the temperature decreased, the current in forward direction became smaller and the ideal coefficient tended to increase. In addition, the energy gap obtained from the temperature dependence of the reverse saturation current of the fabricated pn junction was influenced by the leakage current in the negative voltage region and the impurity of the dopant to compensate for n-type carrier deficiency, which was very small. Even in the case of using a flexible substrate, this pn junction showed rectifying properties. However, this rectification was lost by bending.