レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
レーザーオリジナル
エキシマレーザーアブレーション法による半導性有機薄膜作製ならびにそのエネルギー変換および貯蔵材料への応用
西尾 悟
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ジャーナル フリー

2003 年 31 巻 2 号 p. 141-145

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抄録
Excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) targets enables us to obtain organic thin films with various electronic/electric properties with minute control by changing the ablation conditions. In particular, polyperinaphthelenic organic semiconductor (PPNOS) thin films are prepared by ELA of PTCDA with XeCl excimer laser beams. Enhancement of elimination reaction of side groups of PTCDA is observed by ELA of mixted targets of PTCDA with Co powder. Heterojunctions between the PPNOS films and n-Si wafers are formed and show obvious rectifier properties. I-V curves of the junction in the dark and under illumination show the possibility for the junction to be used as a photovoltaic cell. Furthermore, doping of PPNOS films with Li ions is carried out. The 950 mAh/g maximum capacitance at the first cycle, which is much higher than that of conventional graphite anodes indicates that the films are useful for anode electrodes for ultra thin rechargeable Li ion batteries.
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© 2003 一般社団法人 レーザー学会
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