レーザー解説
極端紫外リソグラフィー光源の装置化技術開発
2004 年 32 巻 12 号 p. 757-762
詳細
2004 年 32 巻 12 号 p. 757-762
Extreme ultraviolet lithography (EUVL) is the main candidate for next generation lithography (NGL) to be introduced at the 45 nm node. The EUV light source requirements are very high, however, demanding an output power of 115 W and an energy stability of ±0.3 % (3 σ, 50 pulses moving average). Currently DPP (discharge-produced-plasma) and LPP (laser-produced-plasma) EUV light sources are considered to be able to fulfill these requirements. This paper presents the current status of the light source development at EUVA and includes a review of worldwide activities.
