In order to manipulate silicon atoms through laser cooling, it is necessary to detune precisely to the resonant frequency of the 33P1→43Po0 transition of silicon atoms at 252.41 nm, 28.8 MHz of the natural linewidth and 35.4 mW/cm2 of the saturation intensity. In this study, we demonstrated the optogalvanic spectroscopy for silicon atoms with two types of nano-second frequency tripled Ti:sapphire lasers.
