抄録
Red high power semiconductor lasers are expected to be used as a light source of laser projection display systems. The characteristics of these lasers need to satisfy several demands in such display system: high power operation for brightness, long device lifetime for high reliability of systems and uniform near field pattern for good uniformity of display. We have achieved 7 W operation of red semiconductor array lasers with high reliability at a wavelength of 643 nm for the first time. The uniform near field pattern has been obtained by applying an index-guided structure for broad-stripe laser. The bending of the array laser is controlled to be smaller than 21μm, which will lead to high resolution of display.
