レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
GaN系405nm半導体レーザーを用いた近接場光記録再生
齊藤 公博篠田 昌孝石本 努中沖 有克山本 眞伸
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2007 年 35 巻 2 号 p. 86-90

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抄録
Near-field recording/readout using a solid immersion lens (SIL) is capable of achieving a numerical aperture (NA) of greater than unity and a higher storage density than conventional optical disc systems. In near-field recording using a SIL, a material having a higher refractive index results in a smaller spot size, as does using a shorter wavelength light source. However, the conventionally used GaN 405-nm laser diode (LD) still has several advantages over shorter wavelength light sources; for example, it can achieve a higher recording density and it is possible to produce more reliable near-field recording/readout systems based on it. We describe a trial that seeks to achieve a higher data transfer rate using a 1.84-NA dual-channel near-field recording/readout system that employs a monolithic dual-beam blue LD.
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