レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
シリコンをベースとする発光デバイス-現状と展望-
一色 秀夫木村 忠正
著者情報
ジャーナル フリー

2007 年 35 巻 9 号 p. 566-571

詳細
抄録
Integration of silicon light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called “silicon photonics” . In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. This paper reviews Si-related optical materials and their light emitting devices from a viewpoint of compatibility with Si wire waveguide. An ErSiO superlattice crystal that we have newly developed is introduced as one candidate of the light source material for silicon photonics. To mention the particular features, this material has a superlattice structure with 0.86-nm period and a large amount of Er (-15 %) as its constituent. In addition, the ErSiO superlattice crystal behaves as a semiconductor and the Er 4f-electrons are excitable by electron-hole pairs in the host. These show the possibilities of high optical gain and its electrical control in Er-doped waveguide amplifier (EDWA).
著者関連情報
© 一般社団法人 レーザー学会
前の記事 次の記事
feedback
Top