レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
GaN半導体レーザー励起Pr3+ドープ固体レーザー
橋本 浩平神成 文彦
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ジャーナル フリー

2008 年 36 巻 4 号 p. 200-205

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Utilizing high-power GaN laser diodes emitting light at 444nm, which have been developed for a blue light source in laser rear projection displays, high-power coherent red light at 639nm, which is also useful for laser rear projection displays, becomes available from Pr3+ doped LiYF4 lasers. In this paper, development of Pr3+: LiYF4 lasers are reviewed. In our experiment, the highest laser power of 112mW was achieved with the optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures were also investigated for practical applications such as a laser projector.
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