Quenching of High-Pressure Phases of Silicon Using Femtosecond Laser-driven Shock Wave

Abstract

High-pressure phases which are Β-Sn, Imma and simple hexagonal structures of silicon are quenched using an intense femtosecond laser-driven shock wave. These high-pressure phases have never synthesized in ambient pressure by hydrostatic and conventional shock compression methods. Femtosecond laser was irradiated to single crystal-silicon with no-dopant. We confirmed the existence of these high pressure phases by analyzing the crystalline structure of the femtosecond laser irradiated silicon using grazing incidence synchrotron x-ray diffraction.