レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
レーザー解説
レーザーを用いた一次元半導体ナノ結晶のボトムアップ合成
中村 大輔下垣 哲也東畠 三洋中田 芳樹岡田 龍雄
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2015 年 43 巻 11 号 p. 762-

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One-dimensional (1D) semiconductor crystal growth has attracted much attention for future nanoscale electronic and optoelectronic devices because of their properties which are difficult to realize using bulk materials. A review on current progress in laser-assisted bottom-up growth of many kinds of 1D semiconductor nanocrystals and its principle growth mechanism has been described. Among many semiconductor materials, zinc oxide (ZnO) is one of the most promising candidates for optical and photonic devices due to excellent luminescence properties. In this article, a novel growth method of ZnO nanocrystals, known as nanoparticle-assisted pulsed laser deposition (NAPLD) has been reviewed. Further, a novel approach of position-controlled growth of ZnO nanocrystals by non-contact laser irradiation without a catalyst has been discussed.
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© 2015 一般社団法人 レーザー学会
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