抄録
The operating temperature range expansion of the vertical cavity surface emitting semiconductor lasers
(VCSELs) was investigated by the optical gain spectral broadening method applying the excitation
quantized level of the quantum well. From the design of the quantum well structure using the excitation
level, the well width of 11‒13 nm is appropriate in AlGaAs/GaAs system. Two types of VCSELs using
the excitation level were fabricated based on the numerical design. The operation temperature range
difference of Δ T = 269℃ and 275℃ were observed by a low temperature range design and a high
temperature range design devices, respectively.
