抄録
Strain-balanced quantum wells are effective for achieving current matching in multi-junction solar cells
by adjusting the light absorption edge of subcells independently of the lattice constant of crystals. A
common material system such as InGaAs/GaAsP still needs intensive engineering for high performance
by reducing non-radiative recombination of carriers: exact strain balancing and the management of
hetero-interfaces. Electroluminescence is an effective method to benchmark the quality of quantum
wells. Strategies for high-quality quantum wells are applicable not only to high-efficiency solar cells but
also to light emitters and modulators for 1-μm wavelength range.
