抄録
We achieved 129 W continuous-wave operation of a single-chip InGaN laser in the 400-nm wavelength
range. Novel wall-plug-efficiency approximation clarifies the relations between the thermal saturation
power and laser parameters, which enable high-power device designs. With the direct diode laser
scheme, this short-wavelength light source shows more efficient copper processing than that operating in
the 900-nm range.
