レーザー研究
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
レーザー解説
プラズモニクスに基づくIII-V 族窒化物半導体の高効率緑色発光
岡本 晃一垣内 晴也亀井 勇希松山 哲也和田 健司船戸 充川上 養一
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ジャーナル フリー

2023 年 51 巻 2 号 p. 97-

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Plasmonics enable significant improvements in the blue emission efficiencies of InGaN/GaN-based semiconductors. However, it remains difficult to achieve high efficiency using plasmonics and other methods in the green wavelength range of ~550 nm, which is the peak of human visual sensitivity. Semiconductor LEDs suffer from a systematic drop in efficiency in the green/yellow region, known as the “green gap,” and this gap must resolved. In this review, the author, who has been working on this issue since the early 2000s, explains a new method using Ag nanoparticles and dielectric nanofilm structures to solve this problem and obtains highly efficient green light emission.
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