抄録
The development of laser diodes (LDs) in the deep-ultraviolet (UV-C) wavelengths has been progressing
rapidly in recent years. Our research group has demonstrated room-temperature continuous lasing of
LDs in the 270-nm UV-C wavelength band. This article describes, the key technologies for achieving
UV-C LDs: the control of p-type conductivity of AlGaN with high Al composition by polarization doping,
and the pseudomorphic growth of AlGaN heterostructure using AlN single-crystal substrates.
