抄録
Compact lasers capable of producing kilowatt class peak power are highly preferable for various applications,
including laser remote sensing, laser micromachining, and biomedical photonics. In this paper, we
propose a high-peak-power wafer-level diode-pumped solid-state surface-emitting laser in which two
cavities are optically coupled at a solid-state laser gain medium. The first cavity is for intra-pumping of
ytterbium-doped yttrium-aluminum-garnet (Yb:YAG) with an electrically driven indium gallium arsenide
(InGaAs) quantum well, and the second cavity consists of Yb:YAG and chromium-doped yttrium-aluminum-
garnet (Cr:YAG) for passive Q-switching. The proposed laser produces pulses as short as 450 ps,
and an estimated peak power of 57 kW with a laser chip dimension of only 1 mm 3.
