The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
High Power Semiconductor Laser for Optical Disk
A Long Cavity T3 Laser
Akihiro SHIMAHiroshi MATSUBARAHisao KUMABE
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1988 Volume 16 Issue 11 Pages 741-749

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Abstract
A 790nm band long cavity T3 laser whose active layer is thinner near the mirror than in the inner region, has been developed for the optical disk system. Because of its T3 structure, the threshold current of the laser does not increase as the beam divergence becomes narrow. In comparison with the laser of a 250μm cavity length, a 350μm long cavity laser reduces a current density and thermal resistance. The beam divergence parallel and perpendicular to the junction plane are 11.5° and 15.5° respectively, and the aspect ratio is 1.35. In spite of such a narrow beam, the laser emits light at over 100mW light output power even at 80°C. The fundamental transverse mode at least up to 120mW and the stable long term operation over 30mW have been demonstrated.
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© The Laser Society of Japan
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