The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
Semiconductor Laser Embedded with Highly Resistive Layers
The Embedding Growth of Highly Resistive Epitaxial Layers by MOVPE
Shigenobu YAMAKOSHI, Kenya NAKAI
Author information
Keywords: Highly resistive layer, Plannar selective growth, MOVPE, high speed laser, Semi insulating layer
JOURNAL FREE ACCESS

1988 Volume 16 Issue 11 Pages 750-757

Details
Download PDF (1355K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
The epitaxial growth and the selective growth technologies of Fe doped highly resistive InP layers by MOVPE are discussed. As an application, a planner-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer is demonstrated.
Content from these authors
© The Laser Society of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Share this page
feedback
 Top