Abstract
A quantum-well distributed feedback semiconductor laser with an InGaAsP system has been successfully fabricated by the metal organic vapor phase epitaxial growth technique. The quantum well structures with an InGaAs well were grown on InP grating substrates. The use of the quantum well active layers gave rise to several characteristic properties such as a large gain difference of 45cm-1 between the TE-and the TM-mode, a narrow spectral linewidth of 900kHz, a small wavelength chirping width of 4Åunder the 2.4Gbps pulse current modulation, and an increase in resonant frequency.
