Abstract
Semiconductor laser for use in optoelectronic integrated circuits has been developed. A ridge waveguide laser using the same layer with the heterojunction bipolar transitor (HBT) have been successfully integrated on a semi-insulating InP substrate. The n-cladding layer of the laser and the base of the HBT are the same epitaxial layers. This new structure has a small surface step and its fabrication process is very simple.
The threshold current of the ridge-waveguide laser is 30mA, and the characteristic temperature 65K. Since the HBT has an additional narrow band gap layer at the collector side of the base. Early effect is not observed.
This paper describes an analysis of the characteristics of the ridge-waveguide laser and the HBT, fabrication, and the operation of the optoelectronic integrated circuit.
