抄録
Semiconductuctor lasers having radiation wavelength of over 2 μm are introduced. There are two types of lasers, which are III-V compounds and IV-VI compounds. Because of the miscibility gap, III-V compound lasers, such as InGaAsSb only emit at around 2 μm. On the other hand, IV-V1 compound lasers based on PbTe or PbSe extend their wavelength region. Nowadays the lasers of rare earth material doped with lead-chalcogenide emit at longer than 3.4 μm and are operable at high temperatures, permitting pulsed operation over 0 °C.
