抄録
This paper reviews the recent results on the short wavelength (λ′650nm) operation of our InGaAIP visible semiconductor lasers. Theoretically, the InGaAlP visible lasers with an Al-containing active layer should have a highly doped p-type cladding layer in order to reduce the threshold current. The room-temperature cw operation of this material is expected down to the 600nm. We experimentally achieved the room-temperature cw operation to 636nm, using a heter-obarrier blocking structure.
