抄録
When an AlGaInP laser diode is grown on a GaAs substrate misoriented 5-7° to the <011> direction, the lasing wavelength of the diodes is shortened by about 20 nm compared with that of a diode using a (100) GaAs substrate. The diodes are grown by low pressure MOCVD. Using this technique, we obtained, for the first time, highly reliable AlGaInP laser diodes lasing at 567nm without adding Al to an active layer.
