抄録
An outline of a synchrotron radiation (SR) excited reaction is given in connection with silicon epitaxy and related surface processes. Experimental results on SR-excited silicon epitaxial growth and surface cleaning using a disilane molecular beam system are presented. Epitaxial growth was attained at a surface temperature as low as 380°C. It is concluded that the growth rate in the low temperature region is limited by hydrogen desorption from the surface due to SR irradiation. The surface cleaning was realized at a surface temperature of 700°C mainly by an SR excited reductive reaction of the silicon surface oxide by disilane molecules.
