抄録
A novel technique is reviewed for the fabrication of domain reversed gratings in ferroelectric materials such as LiNbO3 and LiTaO3 by means of direct electron beam writing at room tempera-ture without any DC bias. The domain grating is fabricated not only on the beam irradiated-c surface of the crystal, but also in the entire region of the crystal. Such a structure should be useful for various nonlinear optic applications. Theoretical as well as experimental studies have been performed on the second harmonic generation under the quasiphase matched condition. High conversion efficiency has been demonstrated for both LiNbO3 and LiTaO3 crystals.