Abstract
Fabrication mechanisms of thin oxide films have been investigated by using the excimer laser induced metalorganic vapor deposition (Laser-MOCVD) method without heating substrates. TiO2 and PbO films are successfully obtained on (100) Si substrates from their parent metalorganics, Ti (O-iC3H7) 4 and (C2H5) 3PbOCH2C (CH3) 3, respectively. A ZrO2 film is notf ormed from Zr (O-tC4H9) 4. The laser wavelength and irradiation angle dependence measurements indicate that film formation proceeds via light absorption of the metalorganic species adsorbed on the substrates. The existence of one-photon process in the TiO2 film formation is assured by laser fluence dependence measurements. The maximum growth rate, 0.05 Å per laser pulse, of TiO2 film obtained in the experiments is compared with a rough estimation by a surface reaction model. The model can essentially explain the slow growth rate from the small absorption cross section of the metalorganics and the mild fluence of laser irradiation.
