The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 23, Issue 5
Displaying 1-9 of 9 articles from this issue
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  • [title in Japanese]
    Mitsuo ITO
    1995 Volume 23 Issue 5 Pages 311
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.311
    JOURNAL FREE ACCESS
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  • GaAs Ultrafast Photoconductive Switches and Their Application to Ultrafast Photonic Sampling Tec
    Kensuke OGAWA, Jeremy Allam, Albert P. Heberle, Nicholasde B. BAYNES, ...
    1995 Volume 23 Issue 5 Pages 312-322
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.312
    JOURNAL FREE ACCESS
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    GaAs ultrafast photoconductive switches are reviewed from the point of view of their application to ultrafast photonic sampling of high-speed electron devices. The photoconductive switches are interdigitated metal-semiconductor-metal diodes fabricated on low-temperature grown GaAs which reveals femtosecond lifetime of photoexcited carriers. On the basis of ultrafast voltage transients of photoconductive switches, it is pointed out that the dispersion of signal transmission lines and the RC time constant due to electrode capacitance limit the ultrafast performance of the photoconductive switches. Monolithic integration technology is developed for the ultrafast photonic sampling. In this technology, photoconductive switches are connected with an electron device by high-speed waveguides. Fabrication of a nanometer-scale transistor integrated with photoconductive switches is described and ultrafast characteristics of the transistor is presented.
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  • Development of a High-speed Excimer Laser Micro-drilling Apparatus
    Nobuyuki ZUMOTO, Masao IZUMO, Toshinori YAGI, Masaaki TANAKA
    1995 Volume 23 Issue 5 Pages 323-330
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.323
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    In order to use the excimer laser ablation in the practical application of flexible printed circuit board production, a high-speed excimer laser micro-drilling apparatus has been developed. The apparatus has two significant technical points: (1) the increased energy efficiency of the optical system which is named Multiple Irradiation Optical System (MIOS), (2) the synchronous scanning system that enables large area processing. Newly developed MIOS with a spherical concave mirror is more stable than the MIOS with a flat mirror. The energy efficiency of the MIOS is high even for large mask openings.
    The apparatus has been applied for drilling of via-holes of the size less than 20 microns. The processing time is about one minute for a polyimid film 100mm × 100mm wide and 25 microns thick.
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  • Picosecond All-Optical Switching of a Quantum Well Etalon Using Spin-Polarization Relaxation
    Yuji NISHIKAWA, Atsushi TACKEUCHI, Shunichi MUTO, Osamu WADA
    1995 Volume 23 Issue 5 Pages 331-337
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.331
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    All-optical picosecond gate operation is demonstrated using the spin relaxation in a quantum well etalon. Electron spin-polarization photoexcited by circularly polarized light in GaAs quantum wells decays in picoseconds. With the use of the spin relaxation in a quantum well etalon, all-optical full switching is achieved with a decay time of as fast as 7 ps, by adopting a simple optical differential method, which uses only a quarter-wave plate and a polarizer in addition to the conventional all-optical setup. This switching exhibits a contrast between thehigh and the low reflection states of about 10: 7 for a pump pulse energy of 50 fJ/μm2, which is more than 6 times as large as the switching contrast for conventional setup not using the spineffect.
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  • Planar Phase-Doppler Method for Particle Sizing
    Yoshihisa AIZU, Hiroyuki WASHIYAMA, Hiromichi MISHINA
    1995 Volume 23 Issue 5 Pages 338-346
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.338
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    A conventional phase-Doppler method is useful for particle sizing, but is sensitive to the trajectory ambiguity or the Gaussian beam effect/defect which can cause sizing errors when a large particle is measured. This paper reports studies of the phase-diameter characteristics of the planar phase-Doppler method which was proposed to suppress the Gaussian beam defect. Numerical and experimental investigations have been performed to show the usefulness of the proposed method for measuring particles comparable with or larger than the measuring volume size without the Gaussian beam defect.
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  • Narrow-Linewidth KrF Excimer Laser Using a Self-Amplification Resonator
    Tatsuo ENAMI, Kouji KAKIZAKI, Tsutomu KAKUNO
    1995 Volume 23 Issue 5 Pages 347-354
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.347
    JOURNAL FREE ACCESS
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    A narrow linewidth excimer laser for photo-micro-lithography has been investigated . To satisfy the need for both high power and long lifetime of narrowing optics, we developed an original self-amplificaton resonator with two etalons and a prism.An out putpower of 8 watts with a spectralinewidth of 1.0pm can be obtained at a pulse repetition rate of 600pps by using the resonator we developed.An estimated intracavity laser power intensity through the etalonsis1/10and output power is twice that with a conventional narrowlinewidth resonator.
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  • Room Temperature Fabrication of Thin Oxide Films by Laser Induced Metalorganic Chemical Vapor Deposition
    Koji TOKITA, Fumio OKADA, Hideo SEGAWA
    1995 Volume 23 Issue 5 Pages 355-363
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.355
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    Fabrication mechanisms of thin oxide films have been investigated by using the excimer laser induced metalorganic vapor deposition (Laser-MOCVD) method without heating substrates. TiO2 and PbO films are successfully obtained on (100) Si substrates from their parent metalorganics, Ti (O-iC3H7) 4 and (C2H5) 3PbOCH2C (CH3) 3, respectively. A ZrO2 film is notf ormed from Zr (O-tC4H9) 4. The laser wavelength and irradiation angle dependence measurements indicate that film formation proceeds via light absorption of the metalorganic species adsorbed on the substrates. The existence of one-photon process in the TiO2 film formation is assured by laser fluence dependence measurements. The maximum growth rate, 0.05 Å per laser pulse, of TiO2 film obtained in the experiments is compared with a rough estimation by a surface reaction model. The model can essentially explain the slow growth rate from the small absorption cross section of the metalorganics and the mild fluence of laser irradiation.
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  • Deposition by Velocity Selection of Laser Ablated Particles
    Tadashi SUGIHARA, Kanji KUBA
    1995 Volume 23 Issue 5 Pages 364-367
    Published: May 29, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.364
    JOURNAL FREE ACCESS
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    An apparatus with a rotating mechanical chopper for thin film production has been developed. It is demonstrated that the energy of ablated particles is well selected by this method. Further, this method is applicable to Au thin film deposition and, is recognized to be useful to improve thin film quality because the number of droplets in the film are drastically decreased.
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  • Erratum to : An Application of Excimer Laser for the Crosslinking of Polyethylene
    1995 Volume 23 Issue 5 Pages e1
    Published: 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.5_e1
    JOURNAL FREE ACCESS
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