Ion Assisted Deposition of TiO₂ Thin Films by Kaufman and Gridless Ion Sources

抄録

TiO₂ thin films were deposited by Ar ion beam assistance of Kaufman and gridless ion sources. Optical and structural properties of IAD TiO₂ thin films and comparison between two types of sources are described. The result shows that Ar IAD by both ion sources improves the packing density and refractive index of TiO₂ thin films. The high energy Ar ion beam of the Kaufman ion source induces an increase in extinction coefficient as the ion current density increases, while the gridless ion source results in a decrease in extinction coefficient. The crystal-line structure of conventional and Kaufman-IAD TiO₂ films is amorphous whereas some gridless-IAD TiO₂ films show anatase phases as the ion current density increases.