Abstract
Laser atomic layer epitaxy technique is reviewed, and growth characteristics and surface processes in laser Atomic Layer Epitaxy (ALE) are described. The self-limiting mechanism is the key to attain the ideal layer-by-layer controllability in growth rate. The self-limited growth is obtained in a wide range of several growth parameters. The self-limiting mechanism is induced by the site-selective decomposition of alkylgallium precursors (alkylgallium precursors decompose only at the As surface, but not at the Ga surface), and the direct absorption of laser light in the chemisorbed alkylgallium layer provides the site selectivity.
