抄録
Self-sustained-pulsing A1GaInP laser diodes having very low intensity noise characteristics were successfully demonstrated by adopting a novel structure, which has highly doped saturable absorbing layer. Short carrier lifetime, which is indispensable for self-sustained pulsation, was realized by applying highly doped saturable absorbing layer. Self-pulsing laser diodes with the lasing wavelength of 650nm-band were fabricated, resulting in the threshold current of 76mA at 20°C. The relative intensity noise (RIN) was below - 138dB/Hz in the temperature range 20-60°C at the average output power of 5mW.
