Fabrication of non-equilibrium Si: Te and Si: Zn Systems with extremely high impurity concentration by means of laser annealing.

Kouichi MURAKAMI; Eiji IKAWA; A.H. ORABY; Kenji GAMO; Susumu NAMBA; Yasuhiro MASUDA

doi:10.2184/lsj.9.434

レーザー・アニールによる非平衡・超高不純物濃度のSi: Te, Si: Zn系作成

非平衡・超高不純物濃度のSi: Te系作成

村上浩一, 井川英治, A.H. ORABY, 蒲生健次, 難波進, 増田康博

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ジャーナルフリー

1981 年 9 巻 4 号 p. 434-438

DOI https://doi.org/10.2184/lsj.9.434

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抄録

We have investigated non-equilibrium Si with extremely high impurity concentration of Te and Zn fabricated by means of pulsed-laser annealing and ion implantation. It was found that there exists a significant difference of segregation and lattice between II (Zn)-and VI (Te)-colum atoms after laser annealing. It was possible to dope subsititutional Te impurity up to some 5×10²⁰/cm³ and fabricate the non-equilibrium Si: Te system with n-type conduction.

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