Abstract
Impurity analysis in Si and GaAs with Secondary Ion Mass Spectromotry (SIMS) has been studied using ion implanted substrates as standard samples. Oxygen ion beams were used as a primary beam for B+, As+, P+, Cr+ and Be+ detection, and Cesium ion beams for O-, Si- and S- detection. By means of high resolution mass analysis (M/ΔM ≒7000), 4 decades' in-depth profiles of P in Si could be obtained. Detection limits were determined from in-depth profiles and discussed with regard to base pressure in the analytical chamber, contamination of immersion lens and relative sensitivities.
