Materia Japan
Online ISSN : 1884-5843
Print ISSN : 1340-2625
ISSN-L : 1340-2625
Raman Micro-analysis of Residual Stress in Semiconducting Materials and Devices
Yoshiro Akagi, Yasunari Okamoto
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Keywords: Raman, residual stress, gallium arsenide, gallium aluminum arsenide, silicon, zinc selenide, photoluminescence, polycrystalline silicon, metalization, Electron spin resonsnce
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1995 Volume 34 Issue 7 Pages 889-894

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