2001 Volume 42 Issue 11 Pages 2434-2439
The equilibrium between Ga–As melt, containing arsenic up to 5 mass%, and B2O3 flux was investigated from 1273 to 1523 K in a silica ampoule. The effect of arsenic on equilibrium contents of oxygen, boron and silicon in the melt was investigated. The results were analyzed using interaction parameters. The equilibrium distribution ratio of oxygen between Ga–As melt and B2O3 flux decreased with the increase of temperature, Ga2O3 content in the flux and arsenic content in the melt. The activity of Ga2O3 in the B2O3 flux was determined in the temperature range from 1273 to 1523 K, which is relevant to the practical process of crystal growth of GaAs.