Abstract
Grain morphology of recrystallized polycrystalline(poly)-Si by excimer laser annealing (ELA) was investigated for both SiO2 (50 nm)/SiN (50 nm)/glass substrate and quartz substrate. The Raman peak of the poly-Si on the SiN substrate was shifted to the higher frequency side than that on the quartz substrate. The disk-shaped grains were observed on the quartz substrate, while they were not observed on the SiN substrate. The poly-Si grains with a uniform grain size were observed, and kept constant in a range of the present energy density and the shot number on the SiN substrate. To understand these phenomena, the crystal growth model relating to the concentration of hydrogen atoms in the film is discussed.
