Effects of Protium Introduction on Electrical and Optical Properties of Tin-Germanium Oxide Thin Films

Abstract

Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge≤1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge≥4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introduction.