2002 Volume 43 Issue 5 Pages 1225-1229
Interface formation and phase distribution by the solid-state reactions between thin sputtered cobalt films and SiC were studied at temperatures between 1023 and 1723 K for various times. The reaction with the formation of silicides and carbon was first observed above 1123 K. At 1323 K, and as the reaction proceeded, the initially formed Co2Si layer converted to CoSi. The deposited cobalt thin film reacted completely with SiC after annealing at 1323 K for 0.5 h. The thermodynamically stable CoSi is the only observed silicide in the reaction up to 1723 K. A reaction model and a thermodynamic argument are proposed to interpret the interface formation and phase distribution of this system.