Rapid Synthesis of Yttria-Partially-Stabilized Zirconia Films by Metal-Organic Chemical Vapor Deposition

Rong Tu; Teiichi Kimura; Takashi Goto

doi:10.2320/matertrans.43.2354

MATERIALS TRANSACTIONS

Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678

Rapid Synthesis of Yttria-Partially-Stabilized Zirconia Films by Metal-Organic Chemical Vapor Deposition

Rong Tu, Teiichi Kimura, Takashi Goto

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Keywords: yttria-partially-stabilized zirconia, metal-organic chemical vapor deposition, high deposition rate, thermal barrier coatings, Hastelloy-XR

JOURNAL FREE ACCESS

2002 Volume 43 Issue 9 Pages 2354-2356

DOI https://doi.org/10.2320/matertrans.43.2354

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Abstract

Yttria-partially-stabilized zirconia (YPSZ) films were synthesized on Hastelloy-XR as thermal barrier coatings (TBC) at a high deposition rate of 100 \\micron h⁻¹ (2.8×10⁻⁸ ms⁻¹) by metal-organic chemical vapor deposition (MOCVD) using Zr(dpm)₄ and Y(dpm)₃ precursors. The deposition rate of 100 \\micron h⁻¹ was the highest among the reported values for YPSZ films by CVD . The YPSZ films were columnar morphology and (200) oriented with a tetragonal structure.

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