MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Formation of Whiskers at Dislocation Sites of n-Type GaP Surface during Anodic Etching
Shigeo SugawaraKaichi SaitoKenji Aoki
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2003 Volume 44 Issue 7 Pages 1333-1335

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Abstract

It was recently found that the electrochemical dissolution of an n-GaP (111) surface proceeded selectively or uniformly in an aqueous KOH solution, depending on an anodic high-voltage above ten volts. In the present study we report the formation of whiskers at dislocation sites of the n-GaP (111) surface that remain undissolved at an anodic voltage of 16 V in the 0.5 kmol·m−3 KOH solution.

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© 2003 The Japan Institute of Metals and Materials
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