Formation of Whiskers at Dislocation Sites of n-Type GaP Surface during Anodic Etching

Abstract

It was recently found that the electrochemical dissolution of an n-GaP (111) surface proceeded selectively or uniformly in an aqueous KOH solution, depending on an anodic high-voltage above ten volts. In the present study we report the formation of whiskers at dislocation sites of the n-GaP (111) surface that remain undissolved at an anodic voltage of 16 V in the 0.5 kmol·m⁻³ KOH solution.