2003 Volume 44 Issue 7 Pages 1394-1399
Photoluminescence (PL), Raman, and transmission IR spectral measurements of porous silicon (PS) have been carried out during exposure to thermoelectrons and also subsequent exposure to H atoms, H2O and O3. The PL band of as-anodized PS was significantly decreased by the first exposure to thermoelectrons accompanied by the intensity reduction of the IR bands due to hydrogenated Si species (Si–Hx; x=1–3). Upon subsequent exposure to H atoms the PL band intensity was almost recovered but never exceeded its original intensity. This PL recovery was accompanied by re-generation of Si–Hx bonds. In contrast, an overshooting recovery in the PL intensity took place when thermoelectron-treated PS was exposed to H2O or O3. The obtained IR spectra showed that Si–O and/or Si–OH bonds were formed at the PS surface. These results demonstrate that the PL of the PS is quite sensitive to the oxygen-included surface bonds.
