Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
In-situ Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H2O and /O3
Toshimasa WadayamaTuyoshi AriganeAritada Hatta
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2003 Volume 44 Issue 7 Pages 1394-1399


Photoluminescence (PL), Raman, and transmission IR spectral measurements of porous silicon (PS) have been carried out during exposure to thermoelectrons and also subsequent exposure to H atoms, H2O and O3. The PL band of as-anodized PS was significantly decreased by the first exposure to thermoelectrons accompanied by the intensity reduction of the IR bands due to hydrogenated Si species (Si–Hx; x=1–3). Upon subsequent exposure to H atoms the PL band intensity was almost recovered but never exceeded its original intensity. This PL recovery was accompanied by re-generation of Si–Hx bonds. In contrast, an overshooting recovery in the PL intensity took place when thermoelectron-treated PS was exposed to H2O or O3. The obtained IR spectra showed that Si–O and/or Si–OH bonds were formed at the PS surface. These results demonstrate that the PL of the PS is quite sensitive to the oxygen-included surface bonds.

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© 2003 The Japan Institute of Metals and Materials
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