2004 Volume 45 Issue 2 Pages 225-228
TbFe2 films prepared by a flash evaporation system onto Si(100) or polyimide substrate have been irradiated with different Ar ion doses at zero, 1.3 × 1017 and 2.7 × 1017 cm−2 and at 10 kV. Magnetostrictive properties, i.e., saturated magnetostriction and magnetostrictive susceptibility, of TbFe2 film with disordered structure were improved by Ar ion beam irradiation. This result was probably caused increasing of in-plane compressive stress corresponding to change of volume magnetostriction.