2004 Volume 45 Issue 3 Pages 900-903
Highly conductive and transparent IrO2 thin films were prepared on SiO2 substrates by embedding laser-ablated Ir thin films in IrO2 powders at 973 K for 10.8 ks in O2. The binding energies of Ir 4f7/2 for the as-deposited Ir and the IrO2 thin films were 61.1 and 62.1 eV, respectively. The shift of Ir 4f7/2 binding energy implied the oxidation from Ir to IrO2. The resistivity of the IrO2 thin films at room temperature was 4.0 × 10−7 Ωm. The optical transmittance of IrO2 thin films can reach to 60—80% in the wavelength range of 400—800 nm.